IRF1405ZS-7PPBF International Rectifier, IRF1405ZS-7PPBF Datasheet

MOSFET N-CH 55V 120A D2PAK7

IRF1405ZS-7PPBF

Manufacturer Part Number
IRF1405ZS-7PPBF
Description
MOSFET N-CH 55V 120A D2PAK7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF1405ZS-7PPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.9 mOhm @ 88A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
230nC @ 10V
Input Capacitance (ciss) @ Vds
5360pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
l
l
l
l
l
l
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
HEXFET
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
JC
CS
JA
JA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
j
j
Parameter
Parameter
GS
GS
GS
g
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
h
G
ij
d
IRF1405ZS-7PPbF
IRF1405ZL-7PPbF
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
S
D
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
-55 to + 175
Max.
150
100
120
590
230
± 20
250
810
1.5
®
R
Power MOSFET
DS(on)
Max.
0.65
V
–––
62
40
I
DSS
D
= 120A
= 4.9m
PD - 97206B
= 55V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF1405ZS-7PPBF Summary of contents

Page 1

... Mounting torque, 6- screw Thermal Resistance j R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA R Junction-to-Ambient (PCB Mount, steady state) JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com IRF1405ZS-7PPbF IRF1405ZL-7PPbF G Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter 97206B ® ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss C ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 ( ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 Allowed avalanche Current vs avalanche 1 pulsewidth, tav, assuming Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 300 TOP Single Pulse BOTTOM 1% Duty Cycle ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

D Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ ...

Page 10

D Pak - 7 Pin Part Marking Information 2 D Pak - 7 Pin Tape and Reel Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to ...

Page 11

TO-263CA 7 Pin Long Leads Package Outline Dimensions are shown in millimeters (inches) Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ IR ...

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