IRF1405ZS-7PPBF International Rectifier, IRF1405ZS-7PPBF Datasheet - Page 3

• Manufacturer Part Number: IRF1405ZS-7PPBF
• Description: MOSFET N-CH 55V 120A D2PAK7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1405ZS-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 5360pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
100
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
0
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
1
4.5V
4
T J = 25°C
Tj = 25°C
10
6
60µs PULSE WIDTH
V DS = 25V
60µs PULSE WIDTH
8
TOP
BOTTOM
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
12
1000
100
150
125
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
10
75
50
25
1
0
0.1
0
25
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
50
1
75
4.5V
Tj = 175°C
T J = 175°C
T J = 25°C
60µs PULSE WIDTH
100 125 150 175 200
10
V DS = 10V
300µs PULSE WIDTH
TOP
BOTTOM
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
3
1000