IRF1405ZS-7PPBF International Rectifier, IRF1405ZS-7PPBF Datasheet - Page 6

MOSFET N-CH 55V 120A D2PAK7

IRF1405ZS-7PPBF

Manufacturer Part Number
IRF1405ZS-7PPBF
Description
MOSFET N-CH 55V 120A D2PAK7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF1405ZS-7PPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.9 mOhm @ 88A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
230nC @ 10V
Input Capacitance (ciss) @ Vds
5360pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
D.U.T
.3 F
0.01
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
1000
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
800
600
400
200
Fig 12c. Maximum Avalanche Energy
0
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
50
vs. Drain Current
T J , Temperature ( °C )
0
75
25
50
100
75 100 125 150 175 200
TOP
BOTTOM 88A
www.irf.com
125
150
I D
14A
23A
175

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