STP4N150 STMicroelectronics, STP4N150 Datasheet - Page 3

• Manufacturer Part Number: STP4N150
• Description: MOSFET N-CH 1500V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STP4N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 7ohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5091-5

STP4N150 - STW4N150
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
Table 2.
Table 3.
Rthj-case Thermal resistance junction-case max
Rthj-amb
Symbol
Symbol
Symbol
I
V
DM
P
V
V
E
T
I
DGR
TOT
AR
I
I
T
stg
DS
GS
AS
D
D
j
(1)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Thermal resistance junction-ambient max
Avalanche characteristics
j
= 25 °C, I
Parameter
Parameter
C
D
GS
Parameter
= 25°C
= I
GS
j
= 20 kΩ)
max)
AR
= 0)
, V
DD
C
C
= 25°C
= 100°C
= 50 V)
TO-220
62.5
-55 to 150
Value
1500
1500
± 30
160
2.5
12
4
1
Value
0.78
Value
350
4
TO-247
Electrical ratings
50
°C/W
°C/W
Unit
W/°C
Unit
Unit
mJ
A
°C
W
V
V
V
A
A
A
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