STP4N150 STMicroelectronics, STP4N150 Datasheet - Page 10

MOSFET N-CH 1500V 4A TO-220

STP4N150

Manufacturer Part Number
STP4N150
Description
MOSFET N-CH 1500V 4A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheets

Specifications of STP4N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.5 S
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
160000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
7ohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5091-5

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Part Number
Manufacturer
Quantity
Price
Part Number:
STP4N150
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3 000
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ST
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Part Number:
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Manufacturer:
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0
Package mechanical data
4
10/14
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
STP4N150 - STW4N150

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