STP4N150 STMicroelectronics, STP4N150 Datasheet - Page 7

• Manufacturer Part Number: STP4N150
• Description: MOSFET N-CH 1500V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STP4N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 7ohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5091-5

STP4N150 - STW4N150
Figure 7.
Figure 9.
Figure 11. Normalized gate threshold voltage
Transconductance
Gate charge vs gate-source voltage Figure 10. Capacitance variations
vs temperature
Figure 8.
Figure 12. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
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