IRFP4768PBF International Rectifier, IRFP4768PBF Datasheet - Page 6

• Manufacturer Part Number: IRFP4768PBF
• Description: MOSFET N-CH 250V 93A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP4768PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 10880pF @ 50V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 93 A
• Power Dissipation: 520 W
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFP4768PbF
6
6.0
5.0
4.0
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2.0
1.0
0.0
90
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Fig 16. Threshold Voltage vs. Temperature
-75 -50 -25
0
I F = 56A
V R = 200V
T J = 25°C
T J = 125°C
I D = 250µA
I D = 1.0mA
I D = 1.0A
200
T J , Temperature ( °C )
0
400
di F /dt (A/µs)
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0
I F = 56A
V R = 200V
T J = 25°C
T J = 125°C
1000
f
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di F /dt (A/µs)
600
6000
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70
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f
0
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1000
I F = 37A
V R = 200V
T J = 25°C
T J = 125°C
I F = 37A
V R = 200V
T J = 25°C
T J = 125°C
200
200
400
di F /dt (A/µs)
400
di F /dt (A/µs)
600
600
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f
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