TPC8018-H(TE12LQM) Toshiba, TPC8018-H(TE12LQM) Datasheet

TPC8018-H(TE12LQM)

Manufacturer Part Number

TPC8018-H(TE12LQM)

Description

MOSFET N-CH 30V 18A SOP8 2-6J1B

Manufacturer

Toshiba

Datasheet

1.TPC8018-HTE12LQ.pdf (7 pages)

Specifications of TPC8018-H(TE12LQM)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.6 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

2.3V @ 1mA

Gate Charge (qg) @ Vgs

38nC @ 10V

Input Capacitance (ciss) @ Vds

2265pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

2-6J1B

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0046 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

18 A

Power Dissipation

1.9 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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High-Speed and High-Efficiency DC/DC Converter

Applications

Notebook PC Applications

Portable-Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

(Note 2a) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

= 12 nC (typ.)

(Note 2a)

(Note 2b)

(t = 10 s)

= 1.1 to 2.3 V (V

(Note 1)

(Note 3)

= 10 µA (max) (V

DS (ON)

(Ta = 25°C)

TPC8018-H

Symbol

DGR

GSS

DSS

stg

| =50 S (typ.)

= 3.5 mΩ (typ.)

= 10 V, I

= 30 V)

−55 to 150

Rating

0.19

±20

210

150

1.9

1.0

= 1 mA)

Unit

°C

Weight: 0.085 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

TPC8018-H

2-6J1B

2006-11-16

―

Unit: mm

Related parts for TPC8018-H(TE12LQM)

TPC8018-H(TE12LQM) Summary of contents

Page 1

... This transistor is an electrostatic-sensitive device. Handle with care. TPC8018-H = 3.5 mΩ (typ.) DS (ON) | =50 S (typ mA (Ta = 25°C) Symbol Rating Unit DSS DGR ± GSS 1 1 210 0. 150 °C ch −55 to 150 T °C stg 1 TPC8018-H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 2006-11-16 ...

Page 2

... Week of manufacture (01 for first week of year, continuing 53) Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 65.8 °C/W th (ch-a) R 125 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 (Unit: mm) ( Ω TPC8018-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2006-11-16 ...

Page 3

... gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8018-H Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ µA 10 ⎯ ⎯ ⎯ ⎯ 15 ⎯ 1.1 2.3 V ⎯ 4.8 6.2 mΩ ⎯ 3.5 4.6 ⎯ ⎯ ...

Page 4

... Gate-source voltage (ON) 100 Common source Ta = 25°C Pulse test 10 4 100 0.1 1 Drain current I 4 TPC8018-H – Common source Ta = 25°C Pulse test 3.5 3.4 3.3 3.2 3 2.8V 1.2 1.6 2 (V) DS – Common source Ta = 25°C Pulse test 4.5 ...

Page 5

... Drain-source voltage 2.5 2 1.5 1 Common source 0 Pulse test 0 −80 −40 100 0 Ambient temperature Ta ( Dynamic input/output characteristics 50 Common source 25°C Pulse test 160 Total gate charge Q 5 TPC8018-H – −0.6 −0.8 −1.0 (V) DS – 120 160 C) ° (nC) g 2006-11-16 ...

Page 6

... Safe operating area 1000 I D max (Pulse) * 100 t=1ms * 10ms * 10 * Single - pulse Ta=25℃ 1 Curves must be derated linearly with increase in V DSS max temperature. 0.1 0 Drain-source voltage V ( – t – Single - pulse 0 100 Pulse width t (s) w 100 6 TPC8018-H (2) (1) 1000 2006-11-16 ...

Page 7

... TPC8018-H 2006-11-16 ...

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