TPC8018-H(TE12LQM) Toshiba, TPC8018-H(TE12LQM) Datasheet - Page 6

• Manufacturer Part Number: TPC8018-H(TE12LQM)
• Description: MOSFET N-CH 30V 18A SOP8 2-6J1B
• Manufacturer: Toshiba

Specifications of TPC8018-H(TE12LQM)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 2265pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 2-6J1B
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0046 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 1.9 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
0.1
10
1
0.1
* Single - pulse
Curves must be derated
linearly with increase in
temperature.
Ta=25℃
I D max (Pulse) *
Drain-source voltage V
1000
100
0.1
10
0.001
Safe operating area
1
1
(1) Device mounted on a glass-epoxy board (a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2a)
(Note 2b)
10ms *
0.01
V DSS max
10
DS
t=1ms *
(V)
0.1
100
Pulse width t
r
r
6
th
th
1
– t
– t
w
w
w
(s)
10
100
Single - pulse
(2)
(1)
1000
TPC8018-H
2006-11-16