TPC8018-H(TE12LQM) Toshiba, TPC8018-H(TE12LQM) Datasheet - Page 2

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TPC8018-H(TE12LQM)

Manufacturer Part Number
TPC8018-H(TE12LQM)
Description
MOSFET N-CH 30V 18A SOP8 2-6J1B
Manufacturer
Toshiba
Datasheet

Specifications of TPC8018-H(TE12LQM)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
2.3V @ 1mA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
2265pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
2-6J1B
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0046 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
1.9 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
(Note 5)
* Weekly code: (Three digits)
TPC8018
H
DD
= 24 V, T
Characteristic
(a)
ch
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25°C (initial), L = 0.5 mH, R
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
G
2
= 25 Ω, I
65.8
Max
125
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= 18 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPC8018-H
2006-11-16

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