2SK3845(Q) Toshiba, 2SK3845(Q) Datasheet
2SK3845(Q)
Specifications of 2SK3845(Q)
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2SK3845(Q) Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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... Source-Drain Ratings and Characteristics Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Marking TOSHIBA K3845 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Symbol Test Condition = ± ...
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I – 100 Common source 25°C Pulse test 0.2 0.4 0.6 0.8 Drain−source voltage V ( – V ...
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(ON) 10 Common source Pulse test −80 − 120 Case temperature Tc (°C) Capacitance – ...
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Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 µ 100 µ Safe operating area 1000 500 I D max (pulsed) * 300 100 µ max (continuous) 100 30 DC ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...