2SK3845(Q) Toshiba, 2SK3845(Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK3845(Q)
• Description: MOSFET N-CH 60V 70A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3845(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 12400pF @ 10V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 70A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 125 W
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
500
300
100
0.5
0.3
0.1
30
10
5
3
1
0.1
I D max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I D max (pulsed) *
Tc = 25°C
Drain-source voltage V
Safe operating area
0.01
0.1
10
1
10 µ
1
DC operation
Duty = 0.5
0.05
Tc = 25°C
0.2
0.1
1 ms *
0.01
100 µ
10
DS
V DSS max
100 µs *
0.02
(V)
1 m
100
Single Pulse
Pulse width t
r
th
10 m
5
R
V
− t
G
DD
w
= 25 Ω
w
= 25 V, L = 91 µH
(S)
500
400
300
200
100
0
15 V
25
0 V
100 m
Test circuit
P DM
Channel temperature (initial) Tch (°C)
50
Duty = t/T
R th (ch-c) = 1.0°C/W
t
T
1
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
Wave form
1
2
VDSS
I
⋅
AR
L
10
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
B VDSS
2006-11-17
2SK3845
150
−
V DD
⎞
⎟
⎟
⎠