2SK3845(Q) Toshiba, 2SK3845(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3845(Q)
• Description: MOSFET N-CH 60V 70A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3845(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 12400pF @ 10V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 70A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 125 W
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
100
160
120
10
80
60
40
20
80
40
0
0
1
1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Common source
V DS = 20 V
Pulse test
Drain−source voltage V
Gate−source voltage V
0.2
8
2
Drain current I
10
10
0.4
⎪Y
I
I
25
D
D
100
fs
– V
– V
⎪ − I
4
DS
GS
6
0.6
D
Tc = −55°C
Tc = −55°C
D
100
GS
(A)
DS
5
100
25
6
0.8
V GS = 4 V
(V)
(V)
4.5
4.3
1000
1.0
8
3
200
160
120
100
1.0
0.8
0.6
0.4
0.2
80
40
10
0
0
1
0
0
1
Common source
Tc = 25°C
Pulse test
8
10
Drain−source voltage V
Gate−source voltage V
1
4
6
Drain current I
10
5.2
R
V
DS (ON)
2
8
I
5
DS
D
V GS = 10, 15 V
– V
– V
4.8
DS
GS
− I
12
3
D
D
100
GS
(A)
DS
Common source
Tc = 25°C
Pulse test
V GS = 4 V
Common source
Tc = 25°C
Pulse test
4.5
16
4.3
4
(V)
(V)
I D = 18 A
2006-11-17
2SK3845
70
35
1000
20
5