BSV236SP L6327 Infineon Technologies, BSV236SP L6327 Datasheet
BSV236SP L6327
Specifications of BSV236SP L6327
BSV236SP
BSV236SPINTR
BSV236SPL6327XT
BSV236SPXT
BSV236SPXTINTR
BSV236SPXTINTR
SP000245421
Related parts for BSV236SP L6327
BSV236SP L6327 Summary of contents
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OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Type Package BSV 236SP PG-SOT-363 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current T ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µA GS ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot A BSV 236SP 1.3 W 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 Safe operating area ...
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Typ. output characteristic =25° parameter µ Vgs = -3. Vgs = -3.8V Vgs = -4.5V Vgs = - ...
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Drain-source on-resistance DS(on) parameter -1 240 m 200 180 98% 160 140 typ. 120 100 80 -60 - Typ. capacitances ...
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Typ. avalanche energy par -1 - ...
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