BSV236SP L6327 Infineon Technologies, BSV236SP L6327 Datasheet - Page 3

• Manufacturer Part Number: BSV236SP L6327
• Description: MOSFET P-CH 20V 1.5A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSV236SP L6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 175 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.2V @ 8µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 228pF @ 15V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.175 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSV2365P L6327; BSV236SP; BSV236SPINTR; BSV236SPL6327XT; BSV236SPXT; BSV236SPXTINTR; BSV236SPXTINTR; SP000245421

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev 1.3
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Page 3
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-1.2A
=-1A, R
DS
=25°C
=-10V, |I
/dt=100A/µs
=0, V
=-10V, V
=-10V, I
=-10V, I
=0 to -4.5V
=-10V, I
=0, |I F | = |I D |
ç 2*çI
Conditions
DS
G
D
=6
F
D
D
D
ç*R
=-15V,
|
GS
=-1.5A
=-1.5A,
=-1.5A
=
DS(on)max
|l
=-4.5V,
D
|,
min.
2.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
14.1
12.2
0.88
16.4
typ.
228
-0.4
-1.8
-3.8
-1.6
4.4
5.7
8.5
3.4
92
75
-
-
BSV 236SP
2006-12-04
max.
-0.11 A
12.7
21.1
18.3
20.5
-0.6
-2.7
-5.7
8.5
1.3
4.3
-6
-
-
-
-
-
Unit
S
pF
ns
nC
V
V
ns
nC