BSV236SP L6327 Infineon Technologies, BSV236SP L6327 Datasheet - Page 6

• Manufacturer Part Number: BSV236SP L6327
• Description: MOSFET P-CH 20V 1.5A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSV236SP L6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 175 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.2V @ 8µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 228pF @ 15V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.175 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSV2365P L6327; BSV236SP; BSV236SPINTR; BSV236SPL6327XT; BSV236SPXT; BSV236SPXTINTR; BSV236SPXTINTR; SP000245421

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
m
Rev 1.3
pF
10
10
10
240
200
180
160
140
120
100
80
-60
3
2
1
0
DS
= f(T j )
)
D
-20
GS
= -1.5 A, V
5
=0, f=1 MHz
20
Ciss
Coss
Crss
10
98%
typ.
GS
60
= -4.5 V
100
V
°C
T
- V
j
DS
160
20
Page 6
10 Gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
1.4
V
0.8
0.6
0.4
0.2
A
-1
-2
1
-60
1
0
0
= f (T j )
SD
BSV 236SP
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
DS
1.2
T
T
T
T
j
j
j
j
2%
, I
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
typ.
98%
D
1.6
60
= -8 µA
2
BSV 236SP
100
2006-12-04
2.4
°C
V
V
T
SD
j
160
3