UPA1980TE-T1-AT Renesas Electronics America, UPA1980TE-T1-AT Datasheet - Page 4

• Manufacturer Part Number: UPA1980TE-T1-AT
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1980TE-T1-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4V
• Input Capacitance (ciss) @ Vds: 272pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOS FET ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (T
Notes 3. Mounted on FR-4 board of 5000 mm
2
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Junction Temperature
Storage Temperature
2. Mounted on FR-4 board of 5000 mm
4. 50 Hz sine wave, 1 cycle
Note4
10 s, Duty Cycle
Note1
Note2
Note3
DS
GS
= 0 V)
= 0 V)
1%
2
2
Data Sheet G16550EJ1V0DS
x 1.1 mm
x 1.1 mm, t
I
D(pulse)
I
V
V
V
I
D(DC)
I
T
F(AV)
T
T
P
FSM
RRM
GSS
T
DSS
A
stg
stg
ch
T
j
= 25°C)
5 sec.
55 to +125
55 to +125
+125
m8.0
m2.0
m8.0
0.57
150
20.0
0.5
5.5
40
°C
°C
°C
°C
W
V
V
A
A
V
A
A
A
= 25°C)
PA1980