UPA1980TE-T1-AT Renesas Electronics America, UPA1980TE-T1-AT Datasheet - Page 6

• Manufacturer Part Number: UPA1980TE-T1-AT
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1980TE-T1-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4V
• Input Capacitance (ciss) @ Vds: 272pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOS FET TYPICAL CHARACTERISTICS (T
4
- 0 .01
- 1 00
- 0 .1
- 1 0
120
100
80
60
40
20
- 1
0
- 0 .1
FORWARD BIAS SAFE OPERATING AREA
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
S ingle p ulse
M o unted on F R -4 bo ard o f
500 0 m m
R
(V
D S (o n)
G S
25
V
T
= –4.5 V )
DS
A
Lim ite d
- Drain to Source Voltage - V
- Ambient Temperature - C
1000
2
I
50
D (D C )
100
x 1.1 m m
10
- 1
1
1 m
75
I
D (pu lse)
100
- 1 0
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
125
P W = 1 m s
10 m s
100 m s
5 s
150
Data Sheet G16550EJ1V0DS
- 1 00
100 m
175
A
= 25°C)
PW - Pulse Width - s
1
0.6
0.5
0.4
0.3
0.2
0.1
0
Single pulse
Mounted on FR-4 board of
5000 mm
PD (FET) : P (SBD) = 1:0
10
0
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
2
x 1.1 mm
- Ambient Temperature - C
50
100
Mounted on FR-4 board of
5000 mm
75
2
100
x 1.1 mm, t
1000
125
150
PA1980
5 sec.
175