UPA1980TE-T1-AT Renesas Electronics America, UPA1980TE-T1-AT Datasheet - Page 7

• Manufacturer Part Number: UPA1980TE-T1-AT
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1980TE-T1-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4V
• Input Capacitance (ciss) @ Vds: 272pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

- 0.9
- 0.8
- 0.7
- 0.6
- 0.5
- 0.4
300
250
200
150
100
- 1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
- 8
- 6
- 4
- 2
50
0
- 0.01
-50
0
V
Pulsed
Pulsed
G S
T
V
- 0.2
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
= –4.5 V
A
DS
ch
= 125°C
- Drain to Source Voltage - V
- Channel Temperature - C
–25°C
0
75°C
25°C
I
–1.8 V
D
- 0.4
- 0.1
- Drain Current - A
V
GS
= –4.5 V
- 0.6
50
–2.5 V
- 0.8
- 1
V
I
D
DS
100
= –1.0 m A
= –10.0 V
- 1
Data Sheet G16550EJ1V0DS
150
- 1.2
- 10
- 0 .0 0 0 0 1
- 0 .0 0 0 1
- 0 .0 0 1
- 0 .0 1
- 0 .1
- 1 0
0.01
- 1
0.1
300
250
200
150
100
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
1
- 0.01
- 0.01
FORWARD TRANSFER CHARACTERISTICS
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
V
Pulsed
V
P u ls e d
D S
G S
D S
= –10.0 V
V
= –2.5 V
- 0 .5
= – 1 0 .0 V
GS
- Gate to Source Voltage - V
I
I
D
D
- 0.1
- 0.1
- Drain Current - A
- Drain Current - A
T
- 1
A
= 125°C
–25°C
75°C
25°C
- 1 .5
T
A
- 1
T
- 1
= 1 2 5 ° C
A
= –25°C
– 2 5 ° C
PA1980
7 5 ° C
2 5 ° C
125°C
- 2
25°C
75°C
- 2 .5
- 10
- 10
5