UPA1980TE-T1-AT Renesas Electronics America, UPA1980TE-T1-AT Datasheet - Page 8

• Manufacturer Part Number: UPA1980TE-T1-AT
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1980TE-T1-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4V
• Input Capacitance (ciss) @ Vds: 272pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
100
300
250
200
150
100
300
250
200
150
100
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
50
1
- 0.01
- 0.1
-50
V
V
Pulsed
Pulsed
GS
G S
V
SWITCHING CHARACTERISTICS
t
t
t
t
f
d(on)
r
GS
d(off)
= –2.5 V, I
= –1.8 V
T
ch
= –1.8 V, I
- Channel Temperature - C
0
I
D
I
- 0.1
D
- Drain Current - A
- Drain Current - A
D
= –1.0 A
V
D
GS
= –0.5 A
- 1
50
= –4.5 V, I
- 1
V
V
R
DD
G S
G
100
T
= 10
D
–25°C
= –10.0 V
= –4.0 V
A
75°C
25°C
= –1.0 A
= 125°C
Data Sheet G16550EJ1V0DS
- 10
- 10
150
1000
300
250
200
150
100
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
- 5
- 4
- 3
- 2
- 1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
10
0
- 0.1
0
0
V
f = 1.0 M H z
I
D
G S
= –2.0 A
V
V
V
0.5
DD
= 0 V
DS
GS
= –4.0 V
–10.0 V
–16.0 V
- Drain to Source Voltage - V
- 2
- Gate to Source Voltage - V
Q
G
- 1
1
- Gate Change - nC
1.5
- 4
- 10
2
I
Pulsed
- 6
D
= –1.0 A
2.5
C
C
C
oss
iss
rss
PA1980
- 100
- 8
3