SPP08P06P G Infineon Technologies, SPP08P06P G Datasheet
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SPP08P06P G
Specifications of SPP08P06P G
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SPP08P06P G Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Rev 1.5 Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current Symbol puls jmax tot Page 1 SPP08P06P 0.3 DS(on) I -8.8 D Pin 1 PIN 2 Value -8.8 -6.2 -35.2 70 4.2 6 ±20 42 -55...+175 stg 55/175/56 2009-04-14 V ...
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... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.5 Symbol °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 ° 150 ° GSS R DS(on) Page 2 SPP08P06P G Values min. typ. max thJC - - thJA thJA - - - - Values min. typ. max. - -0.1 - ...
Page 3
... Reverse transfer capacitance - MHz GS DS Turn-on delay time Rise time Turn-off delay time Fall time Rev 1 °C, unless otherwise specified j Symbol -6 d(on d(off Page 3 SPP08P06P G Values min. typ. max. 1.5 3.6 - 335 iss - 105 oss - 65 rss - Unit - S 420 pF 135 2009-04-14 ...
Page 4
... Inverse diode forward voltage -8 Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Rev 1 °C, unless otherwise specified j Symbol - (plateau) Symbol Page 4 SPP08P06P G Values Unit min. typ. max. - 1.4 2 -3. Values Unit min. typ. max -8 -35.2 - -1.17 -1. 100 150 nC 2009-04-14 ...
Page 5
... C SPP08P06P 2 - -10 0 - -10 -10 Rev 1.5 Drain current parameter °C 190 Transient thermal impedance thJC parameter : K 12.0µ 100 µ -10 - Page 5 SPP08P06P ³ GS SPP08P06P 100 120 140 160 ) SPP08P06P D = 0.50 single pulse - 2009-04-14 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
Page 6
... -4.0 0 -5.0 0 -6.0 0.6 f -6.5 g -7.0 f 0.5 h -7.5 i -8.0 e 0.4 j -10.0 d 0.3 c 0.2 b 0 Typ. forward transconductance parameter - Page 6 SPP08P06P SPP08P06P [ -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8 -10 - =25° -10 -12 -14 -16 2009-04- -10.0 A ...
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... T j Forward characteristics of reverse diode parameter - iss -10 C oss C rss -10 -10 V -25 -30 - Page 7 SPP08P06P -250 µ 98% typ 2% -60 -60 -60 -60 -20 -20 -20 - 100 100 100 100 ) µs p SPP08P06P 2 1 ...
Page 8
... Drain-source breakdown voltage (BR)DSS j SPP08P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 - Rev Typ. gate charge V GS parameter -16 V -12 -10 125 145 °C 185 T j °C 100 140 200 T j Page 8 SPP08P06P Gate = -8.8 A pulsed D SPP08P06P -8 V 0,2 DS max - 0,8 DS max Gate 2009-04-14 ...
Page 9
... PG-TO220-3 Rev 1.5 Page 9 SPP08P06P G 2009-04-14 ...
Page 10
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.5 ). (www.infineon.com Page 10 SPP08P06P G 2009-04-14 ...