SPP08P06P G Infineon Technologies, SPP08P06P G Datasheet - Page 3

• Manufacturer Part Number: SPP08P06P G
• Description: MOSFET P-CH 60V 8.8A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446908

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
G
G
G
G
Rev 1.5
= 6
= 6
= 6
= 6
³
= 0 V, V
= 0 V, V
= 0 V, V
= -30 V, V
= -30 V, V
= -30 V, V
= -30 V, V
2* I
W
W
W
W
D
* R
DS(on)max
DS
DS
DS
GS
GS
GS
GS
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -25 V, f = 1 MHz
= -10 V, I
= -10 V, I
= -10 V, I
= -10 V, I
, I
D
= -6.2 A
D
D
D
D
= -6.2 A,
= -6.2 A,
= -6.2 A,
= -6.2 A,
j
= 25 °C, unless otherwise specified
Page 3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
1.5
-
-
-
-
-
-
-
Values
typ.
335
105
3.6
65
16
46
48
14
SPP08P06P G
max.
420
135
95
24
69
72
21
2009-04-14
-
Unit
S
pF
ns