IPD50P03P4L-11 Infineon Technologies, IPD50P03P4L-11 Datasheet
IPD50P03P4L-11
Specifications of IPD50P03P4L-11
IPD50P03P4L-11INTR
SP000396290
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IPD50P03P4L-11 Summary of contents
Page 1
... Rev. 1.1 Product Summary DS(on),max I D Marking 4P03L11 Symbol Conditions T =25° =-10V GS T =100° =-10V =25°C D,pulse -25A =25°C tot stg - - page 1 IPD50P03P4L-11 -30 V 10.5 m -50 A PG-TO252-3-11 Value Unit -50 A -42 -200 100 mJ -50 A +5/- -55 ... +175 °C 55/175/56 2009-07-29 ...
Page 2
... V V =0V -1mA (BR)DSS =-85µA GS(th =-24V DSS T =25° =-24V =125° =-16V, V GSS =-4.5V, I =-25A DS(on =-10V, I =-50A GS D page 2 IPD50P03P4L-11 Values min. typ. max 2 -30 - -1.0 -1.5 -2.0 =0V, - -0.02 -1 =0V -70 = -100 - 13.0 18.0 - 8.3 10.5 Unit K µ 2009-07-29 ...
Page 3
... plateau =25° S,pulse V =0V, I =-50A =25° =-15V, I =40A /dt =-100A/µ 2.6K/W the chip is able to carry 60A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD50P03P4L-11 Values Unit min. typ. max. - 2900 3770 pF - 835 1090 - -3.6 ...
Page 4
... DS C parameter 1000 100 Rev. 1.1 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 10 [V] page 4 IPD50P03P4L- ≤ - 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2009-07-29 ...
Page 5
... GS Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter -4 -3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 13 -55 °C 25 °C 12 175 ° -60 [V] page 5 IPD50P03P4L- 25° -4V -4. 120 150 -I [ -50A -10V - 100 140 T [°C] j -5V -10V 180 180 2009-07-29 ...
Page 6
... SD Rev. 1.1 10 Typ. capacitances -850µ 100 140 180 12 Avalanche characteristics parameter: T 100 1.2 1.4 1.6 [V] page 6 IPD50P03P4L- MHz [ j(start) 25°C 100°C 150° 100 t [µs] AV -Ciss -Coss -Crss 25 30 1000 2009-07-29 ...
Page 7
... T [° Typ. gate charge -50A pulsed GS gate D parameter gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms V 6V 24V V g s(th (th [nC] page 7 IPD50P03P4L- -1mA j D -60 - 100 T [° 140 180 Q gate 2009-07-29 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 IPD50P03P4L-11 2009-07-29 ...
Page 9
... Revision History Version Revision 1.1 Rev. 1.1 Date 29.07.2009 page 9 IPD50P03P4L-11 Changes ZthJC scaling for x-axis added 2009-07-29 ...