IPD50P03P4L-11 Infineon Technologies, IPD50P03P4L-11 Datasheet - Page 2

• Manufacturer Part Number: IPD50P03P4L-11
• Description: MOSFET P-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD50P03P4L-11

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3770pF @ 25V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD50P03P4L-11; IPD50P03P4L-11INTR; SP000396290

Rev. 1.1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
DS(on)
-
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25°C
=125°C
page 2
=V
=-24V, V
=-24V, V
=0V, I
=-16V, V
=-4.5V, I
=-10V, I
2
Conditions
cooling area
GS
, I
2)
D
= -1mA
D
D
=-85µA
D
GS
GS
DS
=-50A
=-25A
=0V,
=0V,
=0V
3)
min.
-1.0
-30
-
-
-
-
-
-
-
-
Values
-0.02
13.0
typ.
-1.5
8.3
-7
-
-
-
-
-
IPD50P03P4L-11
max.
-100
18.0
10.5
-2.0
-70
2.6
62
40
-1
-
2009-07-29
Unit
K/W
V
µA
nA
m