IPD50P03P4L-11 Infineon Technologies, IPD50P03P4L-11 Datasheet - Page 7

• Manufacturer Part Number: IPD50P03P4L-11
• Description: MOSFET P-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD50P03P4L-11

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3770pF @ 25V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD50P03P4L-11; IPD50P03P4L-11INTR; SP000396290

Rev. 1.1
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
250
200
150
100
50
12
10
0
8
6
4
2
0
25
0
j
)
gate
-25A
-50A
-12.5A
D
); I
DD
D
10
= -50A pulsed
75
20
Q
T
gate
j
[°C]
[nC]
30
125
6V
40
24V
175
50
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
33
32
31
30
29
28
V
g (th)
g s(th)
-60
GS
= f(T
j
); I
Q
-20
g s
D
= -1mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
IPD50P03P4L-11
g d
100
140
2009-07-29
Q
gate
180