IPD50P03P4L-11 Infineon Technologies, IPD50P03P4L-11 Datasheet - Page 6

• Manufacturer Part Number: IPD50P03P4L-11
• Description: MOSFET P-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD50P03P4L-11

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3770pF @ 25V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD50P03P4L-11; IPD50P03P4L-11INTR; SP000396290

Rev. 1.1
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
1.75
1.25
0.75
0.25
1.5
0.5
= f(T
3
2
1
0
SD
2
1
0
0
-60
)
j
); V
D
j
0.2
-20
GS
0.4
= V
DS
175 °C
20
0.6
-85µA
-V
T
25 °C
SD
0.8
j
60
[°C]
[V]
-850µA
1
100
1.2
140
1.4
180
1.6
page 6
10 Typ. capacitances
C = f(V
12 Avalanche characteristics
I
parameter: T
A S
= f(t
100
10
10
10
10
10
1
4
3
2
1
AV
DS
1
0
)
); V
j(start)
GS
5
= 0 V; f = 1 MHz
10
10
150°C
t
-V
AV
DS
15
[µs]
[V]
100°C
IPD50P03P4L-11
100
20
25°C
25
2009-07-29
-Coss
-Crss
-Ciss
1000
30