SPP18P06P G Infineon Technologies, SPP18P06P G Datasheet

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SPP18P06P G

Manufacturer Part Number
SPP18P06P G
Description
MOSFET P-CH 60V 18.7A TO-220
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPP18P06P_G.pdf (9 pages)

Specifications of SPP18P06P G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18.7A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
81.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000446906
Rev1.8
SPP18P06PG PG-TO220-3
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
· Pb-free lead finishing; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
jmax
®
Power-Transistor
Package
j
=25 °C, unless otherwise specified
Tape and reel information
50pcs / tube
Symbol Conditions
I
I
E
E
dv /dt
V
P
T
D
D,pulse
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
di /dt =-200 A/µs,
T
T
D
D
page 1
A
A
A
j,max
A
=18.7 A, R
=18.7 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
1)
DS
GS
Product Summary
V
R
I
D
=48 V,
=25 Ω
DS
DS(on),max
Marking
18P06P
8
PG-TO220-3
Lead free
Yes
steady state
"-55 ... +175"
55/150/56
260 °C
Value
-18.7
-13.2
-74.8
81.1
151
±20
-6
SPP18P06P G
-18.6
0.13
-60
Unit
A
mJ
kV/µs
V
W
°C
V
Ω
A
2009-04-14

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SPP18P06P G Summary of contents

Page 1

... D,pulse A =25 Ω =18 =18 = /dt di /dt =-200 A/µs, T =175 °C j,max =25 °C tot stg page 1 SPP18P06P G -60 V 0.13 Ω -18.6 A PG-TO220-3 Lead free Yes Value Unit steady state -18.7 A -13.2 -74.8 151 kV/µs ±20 V 81.1 W "-55 ... +175" °C 260 °C 55/150/56 2009-04-14 ...

Page 2

... D V GS(th) 1000 µ DSS T =25 ° =- =150 ° =- GSS =- =-13.2 A DS(on |>2 DS(on)max =-13 (one layer, 70 µm thick) copper area for drain connection. page 2 SPP18P06P G Values Unit min. typ. max 1. -2.1 2 -0.1 -1 µA - -10 -100 - -10 -100 nA - 102 130 mΩ 2009-04-14 ...

Page 3

... MHz C rss t d(on =-13 =2.7 Ω R d(off =- 18 - plateau =25 ° S,pulse =-18 =25 ° = =| /dt =100 A/µ page 3 SPP18P06P G Values Unit min. typ. max. - 690 860 pF - 230 290 - 95 120 - 12.0 18 5.8 8 16.5 - -4.1 -5 -11 -17 - -21 -28 - -5. 18. -74.8 - -0.99 -1. 105 ns - 139 208 nC 2009-04-14 ...

Page 4

... Safe operating area =25 ° parameter limited by on-state resistance 0 Rev1.8 2 Drain current I =f 120 160 [°C] 4 Max. transient thermal impedance Z =f(t ) thJA p parameter µs 100 µ 100 [V] DS page 4 SPP18P06P G |≥ 120 160 T [° 0.5 0.2 0.1 0.05 0. 0.01 single pulse t [ 2009-04-14 ...

Page 5

... parameter - Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev1.8 6 Typ. drain-source on resistance R =f(I DS(on) parameter: V 400 -10 V 320 - 240 -6 V 160 - Typ. forward transconductance g =f 125 °C 25 ° [V] GS page 5 SPP18P06P =25 ° -4 - [A] D =25 ° [ 2009-04-14 ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss Coss 0 Crss [V] DS page 6 SPP18P06P =-1000 µ max. typ. min. - 100 140 T [° °C, typ 150 °C, typ 150 °C, 98% 25 °C, 98% 0.5 1 1.5 2 2.5 -V [V] SD 180 3 ...

Page 7

... I =f parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS -60 - Rev1.8 14 Typ. gate charge V =f(Q GS gate parameter ° 100 °C 125 ° [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 SPP18P06P =-18.6 A pulsed [nC] gate ate 2009-04-14 ...

Page 8

... Package Outline: PG-TO220-3 Rev1.8 page 8 SPP18P06P G 2009-04-14 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev1.8 ). (www.infineon.com page 9 SPP18P06P G 2009-04-14 ...

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