SPP18P06P G Infineon Technologies, SPP18P06P G Datasheet - Page 5

• Manufacturer Part Number: SPP18P06P G
• Description: MOSFET P-CH 60V 18.7A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP18P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 81.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446906

Rev1.8
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
DS
GS
40
35
30
25
20
15
10
8
6
4
2
0
5
0
); T
0
); |V
0
j
=25 °C
j
GS
DS
|>2|I
1
2
D
|R
-20 V
DS(on)max
2
-V
-V
-10 V
-7 V
GS
-4 V
DS
-5 V
-4.5 V
-5.5 V
4
[V]
[V]
-6 V
125 °C
3
6
25 °C
4
page 5
8
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
400
320
240
160
80
14
12
10
0
8
6
4
2
0
D
=f(I
-4 V
0
); T
0
D
-4.5 V
j
); T
=25 °C
GS
5
j
5
-5 V
=25 °C
10
-5.5 V
10
15
-I
-I
-6 V
D
D
15
20
[A]
[A]
-20 V
25
20
SPP18P06P G
-10 V
30
25
-7 V
35
2009-04-14
30