SPP18P06P G Infineon Technologies, SPP18P06P G Datasheet - Page 6

• Manufacturer Part Number: SPP18P06P G
• Description: MOSFET P-CH 60V 18.7A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP18P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 81.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446906

Rev1.8
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
350
300
250
200
150
100
50
10
10
10
0
DS
=f(T
-60
3
2
1
); V
0
j
); I
GS
-20
D
=0 V; f =1 MHz
=-13.2 A; V
5
20
10
-V
T
GS
j
60
DS
[°C]
=-10 V
98 %
[V]
typ.
15
100
Ciss
Coss
Crss
20
140
180
page 6
25
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
3.5
2.5
1.5
0.5
10
10
=f(T
SD
4
3
2
1
0
-1
1
0
-60
)
0
150 °C, typ
j
); V
150 °C, 98%
j
GS
-20
0.5
=V
25 °C, 98%
DS
20
; I
1
D
25 °C, typ
=-1000 µA
-V
T
min.
j
SD
1.5
60
[°C]
max.
typ.
[V]
100
2
SPP18P06P G
140
2.5
2009-04-14
180
3