SPP18P06P G Infineon Technologies, SPP18P06P G Datasheet - Page 4

• Manufacturer Part Number: SPP18P06P G
• Description: MOSFET P-CH 60V 18.7A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP18P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 81.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446906

Rev1.8
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
90
80
70
60
50
40
30
20
10
10
10
0
10
10
DS
0
-1
-2
1
0
A
0.1
); T
)
limited by on-state
resistance
A
p
=25 °C
40
1)
; D =0
1
T
80
-V
A
[°C]
DS
[V]
120
10
DC
1 ms
10 ms
100 µs
160
10 µs
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
20
15
10
10
10
5
0
A
-1
1
0
); |V
10
0
p
)
-5
0.02
0.05
single pulse
0.01
0.2
0.1
GS
0.5
10
|≥10 V
p
-4
/T
40
10
-3
10
80
T
-2
t
A
p
[°C]
[s]
10
-1
120
SPP18P06P G
10
0
10
160
1
2009-04-14
10
2