IPA60R950C6 Infineon Technologies, IPA60R950C6 Datasheet - Page 13

MOSFET N-CH 600V 4.4A TO220-FP

IPA60R950C6

Manufacturer Part Number
IPA60R950C6
Description
MOSFET N-CH 600V 4.4A TO220-FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPA60R950C6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
3.5V @ 130µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 100V
Power - Max
26W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.86ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-220FP
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
0.86 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
4.4 A
Power Dissipation
26 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
950.0 mOhm
Id(max) @ Tc=25°c
4.4 A
Idpuls (max)
12.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPA60R950C6
Manufacturer:
Infineon
Quantity:
500
Part Number:
IPA60R950C6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
6
Table 20
Table 21
Table 22
FinalData Sheet
Switching times test circuit for inductive load
Unclamped inductive load test circuit
Test circuit for diode characteristics
R
G1
R
R
G2
G1
V
Test circuits
Switching times test circuit and waveform for inductive load
Unclamped inductive load test circuit and waveform
Test circuit and waveform for diode characteristics
= R
GS
I
D
I
G2
D
V
V
V
DS
DS
DS
Switching time waveform
Unclamped inductive waveform
Diode recovery waveform
13
V
V
GS
DS
V
DS
v
600V CoolMOS™ C6 Power Transistor
10%
Ι
F
90%
I
D
t
d(on)
t
d /d
on
Ι
F
RRM
t
r
S
rr
S
rr
= +
V
=
t
D
S
d(off)
rr
S
+
F
90% Ι
F
t
off
Rev. 2.1, 2010-03-11
F
F
v
t
f
RRM
V
d
(BR)DS
rr
IPx60R950C6
/d
10%
Test circuits
Ι
RRM
RRM
SIL00088
V
DS

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