IPA60R950C6 Infineon Technologies, IPA60R950C6 Datasheet - Page 7

• Manufacturer Part Number: IPA60R950C6
• Description: MOSFET N-CH 600V 4.4A TO220-FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPA60R950C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 3.5V @ 130µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 100V
• Power - Max: 26W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.86ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220FP
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 0.86 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 26 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 950.0 mOhm
• Id(max) @ Tc=25°c: 4.4 A
• Idpuls (max): 12.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 8
Parameter
IGate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Table 9
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
FinalData Sheet
Gate charge characteristics
Reverse diode characteristics
Symbol
Q
Q
Q
V
Symbol
V
t
Q
I
rr
rrm
plateau
SD
gs
gd
g
rr
Min.
-
-
-
-
Min.
-
-
-
-
7
Typ.
1.5
6.5
13
5.4
Typ.
0.9
220
1.5
12
Values
Values
600V CoolMOS™ C6 Power Transistor
Max.
-
-
-
-
Max.
-
-
-
-
Unit
nC
V
Unit
V
ns
µC
A
Electrical characteristics
Note /
Test Condition
V
V
Note /
Test Condition
V
T
V
d
(see table 22)
Rev. 2.1, 2010-03-11
i
j
DD
GS
GS
R
=25 °C
F
=400 V,
/d
=480 V,
=0 to 10 V
=0 V,
t
IPx60R950C6
=100 A/µs
I
F
I
=1.9 A,
F
I
=1.9 A,
D
=1.9 A,