IPA60R950C6 Infineon Technologies, IPA60R950C6 Datasheet - Page 16

MOSFET N-CH 600V 4.4A TO220-FP

IPA60R950C6

Manufacturer Part Number
IPA60R950C6
Description
MOSFET N-CH 600V 4.4A TO220-FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPA60R950C6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
3.5V @ 130µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 100V
Power - Max
26W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.86ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-220FP
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
0.86 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
4.4 A
Power Dissipation
26 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
950.0 mOhm
Id(max) @ Tc=25°c
4.4 A
Idpuls (max)
12.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPA60R950C6
Manufacturer:
Infineon
Quantity:
500
Part Number:
IPA60R950C6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
600V CoolMOS™ C6 Power Transistor
IPx60R950C6
Package outlines
Figure 3
Outlines TO-220 FullPAK, dimensions in mm/inches
FinalData Sheet
16
Rev. 2.1, 2010-03-11

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