SPW52N50C3 Infineon Technologies, SPW52N50C3 Datasheet

SPW52N50C3

Manufacturer Part Number

SPW52N50C3

Description

MOSFET N-CH 560V 52A TO-247

Manufacturer

Infineon Technologies

Series

CoolMOS™r

Datasheets

1.SPW52N50C3.pdf (12 pages)

2.SPW52N50C3.pdf (12 pages)

Specifications of SPW52N50C3

Package / Case

TO-247-3 (Straight Leads)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

70 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

560V

Current - Continuous Drain (id) @ 25° C

52A

Vgs(th) (max) @ Id

3.9V @ 2.7mA

Gate Charge (qg) @ Vgs

290nC @ 10V

Input Capacitance (ciss) @ Vds

6800pF @ 25V

Power - Max

417W

Mounting Type

Through Hole

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.07 Ohm @ 10 V

Drain-source Breakdown Voltage

560 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

52 A

Power Dissipation

417000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Continuous Drain Current Id

52A

Drain Source Voltage Vds

560V

On Resistance Rds(on)

70mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000014626
SPW52N50C3
SPW52N50C3IN
SPW52N50C3X
SPW52N50C3XK

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPW52N50C3

Manufacturer:

INFINEON

Quantity:

149

Company:

Meier Automation Equipment Co., Limited

Part Number:

SPW52N50C3

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SPW52N50C3

Quantity:

5 000

Current page: 1 of 12
Download datasheet (610Kb)

Please note the new package dimensions arccording to PCN 2009-134-A

CoolMOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Worldwide best R

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type

SPW52N50C3

Rev. 2.6

Maximum Ratings

Parameter

Continuous drain current

Pulsed drain current, t

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

Gate source voltage

Gate source voltage AC (f >1Hz)

Power dissipation,

Operating and storage temperature

Reverse diode dv/dt

= 10 A, V

= 20 A, V

= 25 °C

= 100 °C

= 50 V

DS(on)

Package

PG-TO247

= 25°C

limited by T

in TO-247

limited by T

Marking

jmax

52N50C3

Page 1

jmax

dv/dt

Symbol

D puls

tot

j ,

stg

-55... +150

DS(on)

@ T

Value

1800

±20

± 30

156

417

jmax

SPW52N50C3

PG-TO247

2008-02-11

0.07

560

Unit

°C

V/ns

Related parts for SPW52N50C3

SPW52N50C3 Summary of contents

Page 1

... Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134-A Marking 52N50C3 Symbol jmax D puls limited jmax limited jmax tot stg dv/dt Page 1 SPW52N50C3 560 V DS jmax Ω R 0.07 DS(on PG-TO247 Value Unit 156 1800 ±20 ± 30 417 W °C -55... +150 15 ...

Page 2

... GS(th =500V, V =0V, DSS =25° =150° =20V GSS V =10V, I =30A DS(on) T =25° =150° f=1MHz, open Drain G Page 2 SPW52N50C3 Value Unit 50 V/ns Values Unit typ. max 0.3 K 260 °C Values Unit typ. max 600 - 3 3.9 μ 250 - - 100 nA Ω ...

Page 3

... V =380V, V =0/10V, d(on =1.8 Ω =52A d(off =380V, I =52A =380V, I =52A 10V =380V, I =52A DD D (plateau) while V oss while V oss < <T . peak BR, DSS j j,max Page 3 SPW52N50C3 Values Unit min. typ. max 6800 - pF - 2200 - - 150 - - 212 - pF - 469 - - 120 - - 160 - - 290 - - *f. AR ...

Page 4

... rrm di /dt rr Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th,n case C C th1 th2 th Page 4 SPW52N50C3 Values Unit min. typ. max 156 - 1 1 580 - μ 900 - A/μs Value Unit typ. 0.001081 Ws/K 0.004021 0.005415 ...

Page 5

... Please note the new package dimensions arccording to PCN 2009-134-A 2 Safe operating area parameter : 120 °C 160 Typ. output characteristic parameter 280 A 200 160 120 0.01 single pulse Page 5 SPW52N50C3 =25° 0.001 0. 0 =25° μ 20V 7.5V 7V 6.5V 6V 5. 2008-02-11 ...

Page 6

... Typ. transfer characteristics parameter 280 A 200 160 120 100 °C 180 Page 6 SPW52N50C3 =150° 4.5V 5V 5.5V 6V 6.5V 20V 100 120 A 160 I D ≥ DS(on)max = 10 μs 25°C 150° 2008-02-11 ...

Page 7

... Please note the new package dimensions arccording to PCN 2009-134-A 10 Forward characteristics of body diode parameter SPW52N50C3 0.4 Q Gate 12 Avalanche energy par 0 μ Page 7 SPW52N50C3 = 10 μ °C typ 150 °C typ °C (98 150 °C (98%) j 0.8 1.2 1 100 120 160 ° 2008-02-11 ...

Page 8

... Coss 2 10 Crss 100 200 300 400 Rev. 2.6 14 Avalanche power losses parameter: E =1mJ AR 1000 - 800 700 600 500 400 300 200 100 0 4 °C 180 Typ. C stored energy oss oss DS 24 μ 600 0 100 Page 8 SPW52N50C3 200 300 500 2008-02-11 ...

Page 9

... Definition of diodes switching characteristics Rev. 2.6 Page 9 SPW52N50C3 2008-02-11 ...

Page 10

G Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134 ...

Page 11

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 Please note the new package dimensions arccording to PCN 2009-134-A Page 11 SPW52N50C3 2008-02-11 ...

Page 12

New package outlines TO-247 1 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...

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