SPW52N50C3 Infineon Technologies, SPW52N50C3 Datasheet - Page 6

• Manufacturer Part Number: SPW52N50C3
• Description: MOSFET N-CH 560V 52A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW52N50C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 3.9V @ 2.7mA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 52A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014626; SPW52N50C3; SPW52N50C3IN; SPW52N50C3X; SPW52N50C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
5 Typ. output characteristic
I
parameter: t
7 Drain-source on-state resistance
R
parameter : I
Rev. 2.6
D
DS(on)
= f ( V
0.38
0.32
0.28
0.24
0.16
0.12
0.08
0.04
160
120
100
Ω
A
0.2
80
60
40
20
0
0
-60
0
SPW52N50C3
DS
= f (T
); T
-20
4
p
D
j
= 10 μs, V
)
j
= 30 A, V
=150°C
8
20
98%
12
typ
60
GS
GS
= 10 V
16
100
20
°C
T
V
V
20V
6V
5.5V
5V
4.5V
4V
6.5V
j
DS
180
26
Page 6
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
0.35
0.25
0.15
280
200
160
120
0.5
Ω
0.4
0.3
0.2
0.1
A
80
40
0
0
0
= f (I
GS
1
4V
20
D
); V
)
p
j
=150°C, V
4.5V
2
= 10 μs
40
DS
3
≥ 2 x I
5V
60
4
5.5V
80
D
GS
5
x R
SPW52N50C3
100
6
DS(on)max
6V
7
2008-02-11
120
25°C
8
6.5V
A
I
V
V
D
150°C
GS
160
20V
10