SPW52N50C3 Infineon Technologies, SPW52N50C3 Datasheet - Page 7

• Manufacturer Part Number: SPW52N50C3
• Description: MOSFET N-CH 560V 52A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW52N50C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 3.9V @ 2.7mA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 52A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014626; SPW52N50C3; SPW52N50C3IN; SPW52N50C3X; SPW52N50C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
9 Typ. gate charge
V
parameter: I
11 Avalanche SOA
I
par.: T
Rev. 2.6
AR
GS
= f (t
A
= f (Q
V
16
12
10
20
16
14
12
10
8
6
4
2
0
8
6
4
2
0
10
j
0
≤ 150 °C
SPW52N50C3
0.2 V
0.8 V
AR
-3
40 80 120 160 200 240 280 320 360 nC 420
)
Gate
10
DS max
DS max
D
-2
= 52 A pulsed
)
Tj(START)=125°C
10
-1
10
0
10
Tj (START)=25°C
1
10
2
Q
t
μs
AR
Gate
10
Page 7
4
10 Forward characteristics of body diode
I
parameter: T j , t
12 Avalanche energy
E
par.: I
F
AS
= f (V
mJ
10
10
10
10
= f ( T
0.5
A
D
2
1
0
3
2
1
0
20
0
SPW52N50C3
= 10 A, V
SD
j
)
)
0.4
40
0.8
p
60
DD
= 10 μs
1.2
= 50 V
T
T
T
T
80
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
100
SPW52N50C3
2
120
2008-02-11
2.4
°C
V
V
T
SD
j
160
3