SPW52N50C3 Infineon Technologies, SPW52N50C3 Datasheet - Page 4

• Manufacturer Part Number: SPW52N50C3
• Description: MOSFET N-CH 560V 52A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW52N50C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 3.9V @ 2.7mA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 52A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014626; SPW52N50C3; SPW52N50C3IN; SPW52N50C3X; SPW52N50C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
Electrical Characteristics, at T
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
Thermal resistance
R
R
R
R
R
R
Rev. 2.6
th1
th2
th3
th4
th5
th6
P
tot
(t)
0.002689
0.005407
Value
0.011
0.054
0.071
0.036
typ.
T
j
C
th1
R
th1
j
= 25 °C, unless otherwise specified
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
Page 4
T
V
V
di
C
GS
R
F
C
=25°C
=380V, I
/dt=100A/μs
R
Symbol
Thermal capacitance
C
C
C
C
C
C
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
T
=I
T
=I
case
am b
S
S
,
E xternal H eatsink
min.
0.001081
0.004021
0.005415
-
-
-
-
-
-
-
Value
0.158
0.014
0.025
typ.
Values
typ.
580
900
20
70
1
-
-
SPW52N50C3
2008-02-11
max.
156
1.2
52
-
-
-
-
Unit
Ws/K
Unit
A
V
ns
μC
A
A/μs