IRF820AS Vishay, IRF820AS Datasheet
IRF820AS
Specifications of IRF820AS
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IRF820AS Summary of contents
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... 1.6 mm from case. e. Uses IRF820A, SiHF820A data and test conditions containing terminations are not RoHS compliant, exemptions may apply Document Number: 91058 S-83030-Rev. A, 19-Jan-09 IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Power MOSFET FEATURES • Low Gate Charge Q 500 Requirement 3.0 • Improved Gate, Avalanche and Dynamic dV/dt ...
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... IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Top 8.0 V 7.0 V 6.0 V 5 Bottom 4 Drain-to-Source Voltage ( 91058_02 Fig Typical Output Characteristics Document Number: 91058 S-83030-Rev. A, 19-Jan-09 IRF820AS, SiHF820AS, IRF820AL, SiHF820AL 4 µs Pulse Width ° 91058_03 4 µs Pulse Width T = 150 ° 91058_04 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix 10 ° ...
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... IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91058_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 250 100 Total Gate Charge (nC) 91058_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91058_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Single Pulse (Thermal Response 91058_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91058 S-83030-Rev. A, 19-Jan-09 IRF820AS, SiHF820AS, IRF820AL, SiHF820AL 125 150 - Rectangular Pulse Duration ( Driver + - Vishay Siliconix D.U.T. R ...
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... IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix 300 250 200 150 100 100 50 Starting T , Junction Temperature (°C) 9105 8 _12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 700 I D Top 1.1 A 1.6 A Bottom 2.5 A ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91058. Document Number: 91058 S-83030-Rev. A, 19-Jan-09 IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...