IRF820AS Vishay, IRF820AS Datasheet - Page 2

• Manufacturer Part Number: IRF820AS
• Description: MOSFET N-CH 500V 2.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF820AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF820AS

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
d. Uses IRF820A/SiHF820A data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
I
I
C
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
DS
oss
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
/T
J
T
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
V
V
R
GS
GS
= 25 °C, I
GS
DS
T
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= 10 V
= 10 V
= 21 Ω, R
= 0 V
= 25 °C, I
= 400 V, V
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
DD
TEST CONDITIONS
oss
DS
DS
DS
GS
-
-
F
= 500 V, V
= 250 V, I
= V
while V
= 50 V, I
= 0 V, I
= 2.5 A, dI/dt = 100 A/µs
V
V
V
GS
D
V
DS
S
V
GS
I
GS
GS
D
= 97 Ω, see fig. 10
DS
DS
V
= 2.5 A, V
= ± 30 V
see fig. 6 and 13
, I
= 25 V,
= 2.5 A, V
DS
= 0 V,
= 0 V, T
= 400 V, f = 1.0 MHz
DS
D
= 1.0 V, f = 1.0 MHz
D
D
= 0 V to 400 V
= 250 µA
D
= 250 µA
I
is rising from 0 % to 80 % V
GS
= 1.5 A
D
= 2.5 A,
= 1.5 A
D
= 0 V
= 1 mA
GS
J
DS
G
= 125 °C
= 0 V
d
d
= 400 V,
b
d
b, d
b, d
MAX.
b
c, d
D
S
2.5
62
b, d
MIN.
500
2.0
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
S-83030-Rev. A, 19-Jan-09
Document Number: 91058
.
TYP.
0.60
340
490
330
760
2.7
8.1
53
15
28
12
16
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
1140
S
250
500
4.5
3.0
4.3
8.5
2.5
1.6
25
17
10
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nC
pF
ns
ns
V
V
Ω
S
A
V