IRF820AS Vishay, IRF820AS Datasheet - Page 4

• Manufacturer Part Number: IRF820AS
• Description: MOSFET N-CH 500V 2.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF820AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF820AS

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
www.vishay.com
4
91058_06
91058_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
20
15
10
10
5
0
1
4
3
2
0
1
I
D
= 2.5 A
V
DS ,
Q
G
V
4
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
10
= 100 V
V
V
C
C
C
DS
GS
iss
rss
oss
8
= 250 V
= 0 V, f = 1 MHz
= C
= C
= C
V
gs
gd
ds
DS
+ C
+ C
10
= 400 V
2
gd
gd
For test circuit
see figure 13
12
, C
ds
Shorted
C
C
C
oss
rss
iss
10
16
3
91058_08
91058_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
0.1
10
10
Fig. 8 - Maximum Safe Operating Area
1
2
1
0.4
10
T
T
Single Pulse
C
J
= 150 °C
= 25 °C
V
T
V
J
DS
SD
= 150
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.6
10
°
C
2
by R
T
0.8
J
DS(on)
= 25
S-83030-Rev. A, 19-Jan-09
Document Number: 91058
10
100
1
10
°
ms
10
C
µs
ms
µs
3
1.0
V
GS
= 0 V
10
1.2
4