IRF820AS Vishay, IRF820AS Datasheet - Page 5

• Manufacturer Part Number: IRF820AS
• Description: MOSFET N-CH 500V 2.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF820AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF820AS

Document Number: 91058
S-83030-Rev. A, 19-Jan-09
91058_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91058_11
Fig. 12a - Unclamped Inductive Test Circuit
3.0
2.5
2.0
1.5
1.0
0.5
0.0
R
20 V
G
25
V
10
DS
0.1
10
1
-2
10
t
p
-5
0.05
0.02
0.01
D = 0.50
0.20
0.10
50
T
I
AS
C
D.U.T
, Case Temperature (°C)
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
Single Pulse
(Thermal Response)
10
100
-4
15 V
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Driver
125
+
- V
DD
A
t
1
, Rectangular Pulse Duration (s)
150
10
-3
10
-2
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
0.1
t
r
t
j
p
= P
P
DM
DM
D.U.T.
x Z
Vishay Siliconix
R
t
1
1
thJC
D
/t
t
d(off)
V
2
t
DS
2
+ T
C
t
1
f
+
-
www.vishay.com
V
DD
5