IRFB16N50K Vishay, IRFB16N50K Datasheet
IRFB16N50K
Specifications of IRFB16N50K
Available stocks
Related parts for IRFB16N50K
IRFB16N50K Summary of contents
Page 1
... A, dI/dt ≤ 500 A/µs, V ≤ 1.6 mm from case containing terminations are not RoHS compliant, exemptions may apply Document Number: 91096 S09-0015-Rev. A, 19-Jan-09 IRFB16N50K, SiHFB16N50K Power MOSFET FEATURES • Low Gate Charge Q 500 Requirement 0.285 • Improved Gate, Avalanche and Dynamic dV/dt 89 Ruggedness 27 • ...
Page 2
... IRFB16N50K, SiHFB16N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... BOTTOM 5.5V 1 60µs PULSE WIDTH Tj = 150°C 0.1 0 Drain-to-Source Voltage (V) Fig Typical Output Characteristics Document Number: 91096 S09-0015-Rev. A, 19-Jan-09 IRFB16N50K, SiHFB16N50K 5.5V 10 100 5.5V 10 100 Vishay Siliconix 100 150° 25° 100V 60µs PULSE WIDTH 1 ...
Page 4
... IRFB16N50K, SiHFB16N50K Vishay Siliconix 100000 0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = iss 1000 C oss 100 C rss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 12 17A 400V 10 250V 100V 8.0 6.0 4.0 2.0 0 Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
Page 5
... SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91096 S09-0015-Rev. A, 19-Jan-09 IRFB16N50K, SiHFB16N50K 125 150 0.0001 0.001 Rectangular Pulse Duration (sec Driver + - Vishay Siliconix ...
Page 6
... IRFB16N50K, SiHFB16N50K Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 600 TOP 500 BOTTOM 17A 400 300 200 100 100 Starting Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 7.6A 11A 125 150 Current regulator Same type as D.U.T. ...
Page 7
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91096. Document Number: 91096 S09-0015-Rev. A, 19-Jan-09 IRFB16N50K, SiHFB16N50K Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...