IRFB16N50K Vishay, IRFB16N50K Datasheet - Page 2

• Manufacturer Part Number: IRFB16N50K
• Description: MOSFET N-CH 500V 17A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB16N50K

• Mounting Type: Through Hole
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 280W
• Package / Case: TO-220-3 (Straight Leads)
• Thermal Resistance: 0.44°C/W
• Gate-to-drain Charge: 28nC
• Continuous Drain Current - 25 Deg C: 17A
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 350mohm
• Current Rating: 17A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB16N50K

IRFB16N50K, SiHFB16N50K
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
R
I
I
C
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
thCS
DS
oss
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
V
V
GS
GS
J
GS
DS
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= 10 V
= 10 V
J
= 0 V
= 400 V, V
= 25 °C, I
R
V
V
V
V
V
TYP.
G
TEST CONDITIONS
oss
0.50
DS
DS
DD
GS
DS
= 8.8 Ω, V
-
-
= 500 V, V
= V
= 250 V, I
while V
F
= 0 V, I
V
= 50 V, I
V
f = 1.0 MHz
V
= 17 A, dI/dt = 100 A/µs
GS
V
DS
V
S
GS
GS
I
GS
DS
D
DS
= 17 A, V
= ± 30 V
V
, I
= 25 V,
= 17 A, V
= 0 V,
= 0 V, T
DS
= 400 V, f = 1.0 MHz
DS
D
= 1.0 V, f = 1.0 MHz
D
GS
= 250 µA
D
= 250 µA
D
= 0 V to 400 V
I
is rising from 0 to 80 % V
GS
D
= 10 A
= 17 A,
= 10 V
= 10 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
= 0 V
= 400 V
b
b
b
MAX.
0.44
D
S
c
62
-
b
b
MIN.
500
3.0
5.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
S09-0015-Rev. A, 19-Jan-09
.
Document Number: 91096
0.285
TYP.
2210
2620
5710
0.58
240
120
490
26
63
60
18
28
20
77
38
30
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.350
8560
S
250
730
5.0
1.5
50
89
27
43
17
68
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nC
pF
ns
ns
V
V
Ω
S
A
V