IRFB16N50K Vishay, IRFB16N50K Datasheet - Page 5

• Manufacturer Part Number: IRFB16N50K
• Description: MOSFET N-CH 500V 17A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB16N50K

• Mounting Type: Through Hole
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 280W
• Package / Case: TO-220-3 (Straight Leads)
• Thermal Resistance: 0.44°C/W
• Gate-to-drain Charge: 28nC
• Continuous Drain Current - 25 Deg C: 17A
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 350mohm
• Current Rating: 17A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB16N50K

Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
15
10
5
0
Fig. 12a - Unclamped Inductive Test Circuit
25
R G
20 V
0.001
V DS
0.01
0.1
1
1E-006
t p
50
T C , Case Temperature (°C)
D = 0.50
I AS
D.U.T.
0.20
0.10
0.05
0.02
0.01
0.01 Ω
L
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
100
15 V
Driver
125
+
- V DD
0.0001
150
t 1 , Rectangular Pulse Duration (sec)
A
0.001
IRFB16N50K, SiHFB16N50K
Fig. 12b - Unclamped Inductive Waveforms
I
AS
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
0.01
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V
DS
t
r
t
p
0.1
D.U.T.
Vishay Siliconix
R
D
t
V
d(off)
DS
t
f
+
-
www.vishay.com
V
DD
1
5