IRFB16N50K Vishay, IRFB16N50K Datasheet - Page 3

• Manufacturer Part Number: IRFB16N50K
• Description: MOSFET N-CH 500V 17A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB16N50K

• Mounting Type: Through Hole
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 280W
• Package / Case: TO-220-3 (Straight Leads)
• Thermal Resistance: 0.44°C/W
• Gate-to-drain Charge: 28nC
• Continuous Drain Current - 25 Deg C: 17A
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 350mohm
• Current Rating: 17A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB16N50K

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
100
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
1
1
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
10
10
5.5V
5.5V
100
100
IRFB16N50K, SiHFB16N50K
100
1.0
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
4
I D = 17A
V GS = 10V
T J = 150°C
Fig. 3 - Typical Transfer Characteristics
5
V GS , Gate-to-Source Voltage (V)
6
T J , Junction Temperature (°C)
T J = 25°C
7
0
8
20
9 10 11 12 13 14 15 16
40
V DS = 100V
60µs PULSE WIDTH
60 80 100 120 140 160
Vishay Siliconix
www.vishay.com
3