IRFB16N50K Vishay, IRFB16N50K Datasheet - Page 6

• Manufacturer Part Number: IRFB16N50K
• Description: MOSFET N-CH 500V 17A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB16N50K

• Mounting Type: Through Hole
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 280W
• Package / Case: TO-220-3 (Straight Leads)
• Thermal Resistance: 0.44°C/W
• Gate-to-drain Charge: 28nC
• Continuous Drain Current - 25 Deg C: 17A
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 350mohm
• Current Rating: 17A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB16N50K

IRFB16N50K, SiHFB16N50K
Vishay Siliconix
www.vishay.com
6
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
600
500
400
300
200
100
0
25
Starting T J , Junction Temperature (°C)
50
75
100
TOP
BOTTOM 17A
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
I D
7.6A
11A
GS
Same type as D.U.T.
Current regulator
0.2 µF
150
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S09-0015-Rev. A, 19-Jan-09
Document Number: 91096
D.U.T.
I
D
+
-
V
DS