IRF530N,127 NXP Semiconductors, IRF530N,127 Datasheet - Page 2

• Manufacturer Part Number: IRF530N,127
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF530N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1159-5; 934055534127

Philips Semiconductors
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
V
R
g
I
I
Q
Q
Q
t
t
t
t
L
L
L
C
C
C
SYMBOL PARAMETER
I
I
V
t
Q
j
j
= 25˚C unless otherwise specified
GSS
DSS
d on
r
d off
f
S
SM
rr
= 25˚C unless otherwise specified
fs
d
d
s
(BR)DSS
GS(TO)
SD
th j-mb
th j-a
DS(ON)
iss
oss
rss
g(tot)
gs
gd
rr
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
SOT78 package, in free air
CONDITIONS
V
V
V
V
V
V
I
V
V
Resistive load
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
CONDITIONS
I
I
V
D
F
F
GS
DS
GS
DS
GS
DS
DS
DD
GS
GS
GS
= 9 A; V
= 17 A; V
= 17 A; -dI
= 0 V; I
= V
= 10 V; I
= 25 V; I
=
= 100 V; V
= 80 V; V
= 50 V; R
= 10 V; R
= 0 V; V
= 0 V; V
GS
20 V; V
; I
DD
D
D
GS
DS
R
= 80 V; V
D
D
F
= 0.25 mA;
= 1 mA
GS
/dt = 100 A/ s;
D
G
= 25 V
= 0 V
= 9 A
= 9 A
GS
2
= 25 V; f = 1 MHz
= 2.7 ;
= 5.6
DS
= 0 V; T
= 0 V
= 0 V
GS
j
= 10 V
= 175˚C
T
T
T
T
j
j
j
j
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
100
6.4
89
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
TYP. MAX. UNIT
TYP. MAX. UNIT
0.05
0.92
Product specification
633
103
135
3.5
4.5
7.5
60
80
11
10
36
18
12
61
55
3
6
-
-
-
-
-
-
-
-
-
-
-
IRF530N
110
275
100
250
1.9
5.6
1.2
10
40
19
17
68
4
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rev 1.100
K/W
K/W
m
m
nA
nC
nC
nC
nH
nH
nH
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
S
A
A
V
A
A