IRF530N,127 NXP Semiconductors, IRF530N,127 Datasheet - Page 5

• Manufacturer Part Number: IRF530N,127
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF530N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1159-5; 934055534127

Philips Semiconductors
August 1999
N-channel TrenchMOS
20
18
16
14
12
10
8
6
4
2
0
I
F
0
Source-Drain Diode Current, IF (A)
= f(V
VGS = 0 V
Fig.13. Typical reverse diode current.
0.1
SDS
0.2
); conditions: V
0.3
Source-Drain Voltage, VSDS (V)
0.4
0.5
175 C
0.6
GS
0.7
= 0 V; parameter T
0.8
transistor
Tj = 25 C
0.9
1
1.1
1.2
j
5
avalanche current (I
100
0.1
10
1
0.001
Fig.14. Maximum permissible non-repetitive
Maximum Avalanche Current, I
Tj prior to avalanche = 150 C
unclamped inductive load
0.01
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
AV
(ms)
Product specification
25 C
1
IRF530N
Rev 1.100
10
AV
);