IRF530N,127 NXP Semiconductors, IRF530N,127 Datasheet - Page 3

• Manufacturer Part Number: IRF530N,127
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF530N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1159-5; 934055534127

Philips Semiconductors
August 1999
N-channel TrenchMOS
100
ID% = 100 I
100
0.1
100
10
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
1
0
0
I
Fig.2. Normalised continuous drain current.
D
1
0
0
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
Normalised Current Derating, ID (%)
& I
Normalised Power Derating, PD (%)
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
DM
25
25
= f(V
PD% = 100 P
D
Mounting Base temperature, Tmb (C)
/I
Mounting Base temperature, Tmb (C)
D 25 ˚C
Drain-Source Voltage, VDS (V)
DS
50
50
); I
10
D.C.
= f(T
DM
single pulse; parameter t
75
75
mb
D
/P
); conditions: V
D 25 ˚C
100
100
100
= f(T
100 ms
tp = 10 us
100 us
10 ms
1 ms
transistor
125
125
mb
mb
= 25 ˚C
)
GS
150
150
10 V
1000
p
175
175
3
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.01
20
18
16
14
12
10
0.1
8
6
4
2
0
Fig.5. Typical output characteristics, T
0.2
0.1
10
Fig.6. Typical on-state resistance, T
0
1
1E-06
0
Drain Current, ID (A)
0
Drain-Source On Resistance, RDS(on) (Ohms)
Tj = 25 C
Transient thermal impedance, Zth j-mb (K/W)
4.6V
0.02
0.1
0.2
D = 0.5
Fig.4. Transient thermal impedance.
0.2
single pulse
0.05
2
4.8V
1E-05
Z
th j-mb
0.4
5 V
4
Drain-Source Voltage, VDS (V)
0.6
= f(t); parameter D = t
1E-04
6
Drain Current, ID (A)
5.2 V
R
Pulse width, tp (s)
0.8
I
DS(ON)
D
8
VGS = 10V
5.4 V
= f(V
1E-03
10
1
= f(I
DS
)
1.2
12
D
)
1E-02
Product specification
P
D
14
1.4
6V
tp
8 V
4.6 V
p
T
16
VGS = 10V
/T
1.6
1E-01
j
IRF530N
j
Tj = 25 C
D = tp/T
= 25 ˚C .
= 25 ˚C .
18
5.4 V
5.2 V
1.8
Rev 1.100
4.4 V
4.8 V
8 V
5 V
6 V
1E+00
20
2