IRF530N,127 NXP Semiconductors, IRF530N,127 Datasheet - Page 6

• Manufacturer Part Number: IRF530N,127
• Description: MOSFET N-CH 100V 17A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF530N,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1159-5; 934055534127

Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
August 1999
N-channel TrenchMOS
discharge during transport or handling.
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
transistor
L 2
D 1
(1)
b 1
0.7
0.4
c
TO-220
JEDEC
15.8
15.2
1
e
D
E
P
REFERENCES
2
e
6.4
5.9
D 1
0
3
b
10.3
9.7
E
L 1
q
scale
EIAJ
6
5
2.54
e
10 mm
15.0
13.5
L
3.30
2.79
L 1
L 2
max.
Q
3.0
(1)
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
P
3.0
2.7
q
2.6
2.2
Q
ISSUE DATE
97-06-11
Product specification
SOT78
IRF530N
Rev 1.100